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onsemi | QSD123

Manufacturer Part #

QSD123

QSD123 Series 30 V 880 nm Plastic Silicon Infrared Phototransistor - T-1 3/4

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi QSD123 - Technical Attributes
Attributes Table
Wavelength: 880nm
Angle of Half Sensitivity: ±12°
Power Dissipation: 100mW
CE Voltage-Max: 30V
Collector Current @ 25C: 4mA
Package Style:  T-1 3/4
Mounting Method: Through Hole
Features & Applications

The QSD123 is a 100 mW 30 V 880 nm Plastic Silicon Infrared Phototransistor. It comes in a Package of T-1 3/4 and Operating temperature ranges from -40 °C to 100 °C.

Features:

  • NPN Silicon Phototransistor
  • Package Type: T-1 3/4
  • Notched Emitter: QED12X/QED22X/QED23X
  • Narrow Reception Angle: 24°C
  • Daylight Filter
  • Package Material and Color: Black Epoxy
  • High Sensitivity

Applications:

  • Automation
  • Building & Home Controls
  • Medical Electronics/Devices
  • Home Audio System Components
  • Consumer Appliances

View the QSD12 Series of Phototransistor

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
4500
Multiple Of:
250
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$742.50
USD
Quantity
Unit Price
125
$0.172
400
$0.169
1,500
$0.165
5,000
$0.162
20,000+
$0.155
Product Variant Information section