
Référence fabricant
IRFP3710PBF
Single N-Channel 100 V 0.025 Ohm 190 nC HEXFET® Power Mosfet - TO-247-3AC
Infineon IRFP3710PBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Sichuan Gen Microelectronics co.LTD, China for dedicated GEN5 and GEN7 N-Channel MOSFET productsReason The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD, China, according to global Infineon production strategy
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
Infineon IRFP3710PBF - Caractéristiques techniques
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 0.025Ω |
Rated Power Dissipation: | 200|W |
Qg Gate Charge: | 190nC |
Style d'emballage : | TO-247AC |
Méthode de montage : | Flange Mount |
Fonctionnalités et applications
Emballages disponibles
Qté d'emballage(s) :
25 par Tube
Style d'emballage :
TO-247AC
Méthode de montage :
Flange Mount