IRFP3710PBF in Tube by Infineon | Mosfet | Future Electronics
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Référence fabricant

IRFP3710PBF

Single N-Channel 100 V 0.025 Ohm 190 nC HEXFET® Power Mosfet - TO-247-3AC

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date: 2223
Product Specification Section
Infineon IRFP3710PBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.025Ω
Rated Power Dissipation: 200|W
Qg Gate Charge: 190nC
Style d'emballage :  TO-247AC
Méthode de montage : Flange Mount
Fonctionnalités et applications

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247AC package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-247AC contribute to its wide acceptance throughout the industry.

Features

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

The IRFP3710PBF is a Single N-Channel MOSFET. It comes in a TO-247AC package and is shipped in tubes.

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Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
18 Semaines
Commande minimale :
400
Multiples de :
25
Total 
440,00 $
USD
Quantité
Prix unitaire
1
$1.14
40
$1.13
150
$1.11
400
$1.10
1 500+
$1.07