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Manufacturer Part #
FDC638P
P-Channel 20 V 48 mOhm 2.5V PowerTrench Specified Mosfet SSOT-6
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Package Style:SSOT-6 Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
onsemi FDC638P - Product Specification
Shipping Information:
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PCN Information:
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDC638P&field4=onsemi&field18=https://p1na.futureelectronics.com/p/3537495
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDC638P&field4=onsemi&field18=https://p1na.futureelectronics.com/p/3537495
onsemi FDC638P - Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 48mΩ |
| Rated Power Dissipation: | 1.6|W |
| Qg Gate Charge: | 10nC |
| Package Style: | SSOT-6 |
| Mounting Method: | Surface Mount |
Features & Applications
This P-Channel 2.5 V specified MOSFET is advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion.
Product Features:
- 4.5 A, –20 V.RDS(ON) = 48 mW @ VGS = –4.5 V
- RDS(ON) = 65 mW @ VGS = –2.5 V
- Low gate charge (10 nC typical)
- High performance trench technology for extremely low RDS(ON)
- SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)
Applications:
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SSOT-6
Mounting Method:
Surface Mount