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Manufacturer Part #
FDP51N25
N-Channel 250 V 60 mOhm Flange Mount Mosfet - TO-220
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Flange Mount | ||||||||||
| Date Code: | |||||||||||
onsemi FDP51N25 - Product Specification
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Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDP51N25&field4=onsemi&field18=https://p1na.futureelectronics.com/p/4008022
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDP51N25&field4=onsemi&field18=https://p1na.futureelectronics.com/p/4008022
onsemi FDP51N25 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 250V |
| Drain-Source On Resistance-Max: | 60mΩ |
| Rated Power Dissipation: | 320|W |
| Qg Gate Charge: | 70nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Flange Mount |
Features & Applications
The FDP51N25 is a N-Channel enhancement mode power field effect transistors are produced using DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction
Features:
- 51 A, 250 VRDS(on) = 0.060 mW @ VGS = 10 V
- Low gate charge ( typical 55 nC)
- Low Crss ( typical 63 pF)
- Fast switching
- Improved dv/dt capability
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount