
Manufacturer Part #
IRF9358TRPBF
Dual P-Channel 30 V 23.8 mOhm 19 nC HEXFET® Power Mosfet - SOIC-8
Product Specification Section
Infineon IRF9358TRPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
ADVISORY
11/14/2022 Details and Download
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Active
Active
Infineon IRF9358TRPBF - Technical Attributes
Attributes Table
Fet Type: | Dual P-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 16.3mΩ |
Rated Power Dissipation: | 2W |
Qg Gate Charge: | 38nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 9.2A |
Turn-on Delay Time: | 5.7ns |
Turn-off Delay Time: | 146ns |
Rise Time: | 7.2ns |
Fall Time: | 69ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.8V |
Technology: | Si |
Input Capacitance: | 1740pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
13 Weeks
Quantity
Unit Price
4,000
$0.32
8,000
$0.315
12,000+
$0.31
Product Variant Information section
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount