text.skipToContent text.skipToNavigation

Manufacturer Part #

IRF7319TRPBF

Dual N/P-Channel 30 V 0.046/0.098 Ohm 33/34 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2445
Product Specification Section
Infineon IRF7319TRPBF - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: -30V/30V
Drain-Source On Resistance-Max: 0.046Ω/0.098Ω
Rated Power Dissipation: 2W
Qg Gate Charge: 33nC/34nC
Gate-Source Voltage-Max [Vgss]: -20V/20V
Drain Current: -4.9A/6.5A
Turn-on Delay Time: 8.1ns/13ns
Turn-off Delay Time: 26ns/34ns
Rise Time: 8.9ns/13ns
Fall Time: 17ns/32ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -1V/1V
Technology: Generation V
Height - Max: 1.5mm
Length: 5mm
Input Capacitance: 650pF/710pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
8,000
USA:
8,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$1,860.00
USD
Quantity
Unit Price
4,000
$0.465
8,000
$0.46
12,000+
$0.455
Product Variant Information section