text.skipToContent text.skipToNavigation

Manufacturer Part #

IRLR2705TRPBF

Single N-Channel 55 V 40 mOhm 25 nC HEXFET® Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRLR2705TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 40mΩ
Rated Power Dissipation: 68|W
Qg Gate Charge: 25nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 28A
Turn-on Delay Time: 8.9ns
Turn-off Delay Time: 21ns
Rise Time: 100ns
Fall Time: 29ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Technology: Si
Input Capacitance: 880pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
46,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$274.00
USD
Quantity
Unit Price
2,000
$0.137
6,000
$0.134
10,000
$0.133
30,000
$0.131
50,000+
$0.129
Product Variant Information section