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Infineon | IPB65R110CFDATMA2

Manufacturer Part #

IPB65R110CFDATMA2

MOSFET, 60V, 31.2A, 110MOHM, N-Channel, D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2506
Product Specification Section
Infineon IPB65R110CFDATMA2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.11Ω
Rated Power Dissipation: 277.8W
Qg Gate Charge: 118nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 31.2A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 68ns
Rise Time: 11ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 3240pF
Series: CoolMOS CFD2
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:Order inventroy details
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,770.00
USD
Quantity
Unit Price
1,000
$2.77
2,000
$2.75
3,000+
$2.73
Product Variant Information section