text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

warning.svg Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMZA65R048M1HXKSA1

Infineon | IMZA65R048M1HXKSA1

Manufacturer Part #

IMZA65R048M1HXKSA1

Single N-Channel 650 V 39 A 125 W CoolSiC™ Through Hole- Mosfet - TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2324
Product Specification Section
Infineon IMZA65R048M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 39A
Input Capacitance: 1118pF
Power Dissipation: 125W
Operating Temp Range: -55°C to +150°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
240
USA:
240
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
30
Multiple Of:
30
Total
$137.10
USD
Quantity
Unit Price
30
$4.57
120
$4.50
300
$4.45
750
$4.40
1,200+
$4.33
Product Variant Information section