text.skipToContent text.skipToNavigation

Manufacturer Part #

IPS70R600P7SAKMA1

Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS™ Power Mosfet - TO-251

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPS70R600P7SAKMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 700V
Drain-Source On Resistance-Max: 0.6Ω
Rated Power Dissipation: 43.1W
Qg Gate Charge: 10.5nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 8.5A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 63ns
Rise Time: 5.5ns
Fall Time: 23ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 364pF
Package Style:  TO-251 (IPAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1500
Multiple Of:
75
Total
$382.50
USD
Quantity
Unit Price
75
$0.255
4,500
$0.25
15,000
$0.245
22,500+
$0.24
Product Variant Information section