text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. BSZ028N04LSATMA1

Infineon | BSZ028N04LSATMA1

Manufacturer Part #

BSZ028N04LSATMA1

BSZ028N04LS Series 40 V 21 A OptiMOSTM Power-MOSFET - TSDSON-8 FL

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2428
Product Specification Section
Infineon BSZ028N04LSATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 2.8mΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 32nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 21A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 37ns
Rise Time: 4ns
Fall Time: 4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: OptiMOS
Input Capacitance: 2300pF
Package Style:  TSDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
25,000
USA:
25,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
5000
Multiple Of:
5000
Total
$1,975.00
USD
Quantity
Unit Price
5,000
$0.395
10,000
$0.39
15,000+
$0.385
Product Variant Information section