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  6. FQD17P06TM

onsemi | FQD17P06TM

Manufacturer Part #

FQD17P06TM

FQD17P06 Series -60 V -12 A 135 mOhm SMT P-Channel QFET Mosfet - DPAK-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2448
Product Specification Section
onsemi FQD17P06TM - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.135Ω
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 21nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FQD17P06TM is a 60 V 0.135 Ω P-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode  

Features:

  • -12 A, -60 V, RDS(on)= 0.135 Ω@VGS= -10 V
  • Low gate charge ( typical 21 nC)
  • Low Crss (typical 80 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability 

 Applications:

  • High efficiency power management 
  • Automotive
  • Portable and battery operated products
  • Motor control
  • Audio amplifier
  • DC-AC converters

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
1
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,112.50
USD
Quantity
Unit Price
2,500
$0.445
5,000
$0.44
10,000
$0.435
12,500+
$0.43
Product Variant Information section