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Manufacturer Part #

IRFS4010TRLPBF

Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2512
Product Specification Section
Infineon IRFS4010TRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.7mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 143nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 100ns
Rise Time: 86ns
Fall Time: 77ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 9575pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,600
USA:
1,600
12,800
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$792.00
USD
Quantity
Unit Price
800
$0.99
1,600
$0.98
2,400
$0.97
3,200
$0.965
4,000+
$0.945