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Manufacturer Part #

IR2111STRPBF

IR2111S Series Dual 25 V Surface Mount Half Bridge Driver - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
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Product Specification Section
Infineon IR2111STRPBF - Technical Attributes
Attributes Table
Configuration: Half Bridge
No of Outputs: Dual
Peak Output Current: 250mA
Supply Voltage-Max: 25V
Rated Power Dissipation: 0.625W
Quiescent Current: 180µA
Turn-off Delay Time: 180ns
Turn-on Delay Time: 950ns
Rise Time: 130ns
Fall Time: 65ns
Operating Temp Range: -55°C to +150°C
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The IR2111STRPBF is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for halfbridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Features

Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Internally set deadtime
High side output in phase with input
Lead-Free

The IR2111STRPBF is a Half-Bridge Driver. It comes in a SOIC-8 package and is shipped in reels.

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,212.50
USD
Quantity
Unit Price
2,500
$0.485
5,000
$0.48
7,500+
$0.475
Product Variant Information section