SI2304DDS-T1-GE3 in Reel by Vishay | Mosfets | Future Electronics
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Manufacturer Part #

SI2304DDS-T1-GE3

Single N-Channel 30 V 0.06 Ohm Surface Mount Power MosFet - SOT-23-3

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2405
Product Specification Section
Vishay SI2304DDS-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.06Ω
Rated Power Dissipation: 1.7|W
Qg Gate Charge: 2.1nC
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications
The SI2304DDS-T1-GE3 is a N-Channel 30-V (D-S) MOSFET. It is available in a TO-236 package.

Features:

  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • 100 % Rg Tested
  • Compliant to RoHS Directive 2002/95/EC

Applications:

  • DC/DC Converter
Read More...
Pricing Section
Global Stock:
12,000
USA:
12,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$289.20
USD
Quantity
Unit Price
3,000
$0.0964
9,000
$0.094
15,000
$0.0929
30,000
$0.0914
60,000+
$0.0891
Product Variant Information section