
Manufacturer Part #
IPW60R180P7XKSA1
Single N-Channel 600 V 180 mOhm 25 nC CoolMOS™ Power Mosfet - TO-247-3
Infineon IPW60R180P7XKSA1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Introduction of an additional assembly and test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) for TO247-3 products.Detailed change information:Subject:Introduction of an additional assembly and final test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) forTO247-3 products.Reason :Expansion of assembly and test location to assure continuity and increase of supply
Introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME) for CoolMOSTM for package TO247-3Subject Introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME) for CoolMOSTM for package TO247-3.Reason Expansion of assembly and test location to assure continuity and increase of supply.Intended start of delivery 2023-02-25, or earlier, depending on customer?s approval
Part Status:
Infineon IPW60R180P7XKSA1 - Technical Attributes
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 600V |
Drain-Source On Resistance-Max: | 0.18Ω |
Rated Power Dissipation: | 72W |
Qg Gate Charge: | 25nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 18A |
Turn-on Delay Time: | 14ns |
Turn-off Delay Time: | 85ns |
Rise Time: | 12ns |
Fall Time: | 8ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3.5V |
Technology: | CoolMOS |
Input Capacitance: | 1081pF |
Package Style: | TO-247-3 |
Mounting Method: | Through Hole |
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole