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  6. IPD60R2K0C6ATMA1

Infineon | IPD60R2K0C6ATMA1

Manufacturer Part #

IPD60R2K0C6ATMA1

Trans MOSFET N-CH 650V 2.4A 3-Pin(2+Tab) DPAK T/R

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD60R2K0C6ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 2Ω
Rated Power Dissipation: 22.3W
Qg Gate Charge: 6.7C
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.4A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 30ns
Rise Time: 7ns
Fall Time: 50ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 140pF
Package Style:  PG-TO-252-3
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$712.50
USD
Quantity
Unit Price
2,500
$0.285
7,500
$0.28
25,000+
$0.275
Product Variant Information section