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Product Variant Information section
Product Specification Section
Pricing Section

Stock: 1,538

On Order: 0
Factory Stock:Factory Stock: 0
Factory Lead Time: 4 Weeks
Minimum Order: 1
Multiple Of: 1
Quantity Web Price
1 $0.0505
100 $0.0238
250 $0.0205
500 $0.0183
1,500+ $0.0153
Total:

$0.10

USD
Attributes
Attributes Table
Type General Purpose
Polarity NPN
CE Voltage-Max 160V
Collector Current Max 600mA
Power Dissipation-Tot 225mW
Collector - Base Voltage 180V
Collector - Emitter Saturation Voltage 0.2V
Emitter - Base Voltage 6V
DC Current Gain-Min 30
Configuration Single
Collector - Current Cutoff 50nA
Operating Temp Range -55°C to +150°C
Moisture Sensitivity Level 1
Features and Applications

The MMBT5551LT1G is a NPN silicon high voltage transistor with voltage of 160 V, available in a SOT-23 package.

Features:

  • AEC−Q101 Qualified and PPAP Capable
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant