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Manufacturer Part #

STGB10NC60KDT4

STGB10NC60KD Series Low On State Surface Mount IGBT - TO-263-3

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1811
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 20A
Power Dissipation-Tot: 65W
Gate - Emitter Voltage: ±20V
Pulsed Collector Current: 30A
Collector - Emitter Saturation Voltage: 2.5V
Turn-on Delay Time: 17ns
Turn-off Delay Time: 72ns
Qg Gate Charge: 19nC
Reverse Recovery Time-Max: 22ns
Leakage Current: -100A
Input Capacitance: 380pF
Thermal Resistance: 62.5°C/W
Operating Temp Range: -55°C to +150°C
No of Terminals: 3
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STGB10NC60KDT4 is a N-Channel Short Circuit PowerMESH IGBT Transistor. This resulting in an excellent trade-off between switching performance and low on-state behavior.

Features:

  • Lower on voltage drop (VCE(sat))
  • Lower CRES / CIES ratio (no cross-conduction susceptibility)
  • Very soft ultra fast recovery antiparallel diode
  • Short-circuit withstand time 10μs

Applications:

  • High frequency motor controls
  • SMPS and PFC in both hard switch and resonant topologies
  • Motor drives
Pricing Section
Stock:
105,000
Minimum Order:
1,000
Multiple Of:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Total
$670.00
USD
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Quantity
Web Price
1,000
$0.67
2,000+
$0.535
Product Variant Information section