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onsemi | FDS8984

Manufacturer Part #

FDS8984

N-Channel 30 V 23 mOhm SMT PowerTrench Mosfet - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2524
Product Specification Section
onsemi FDS8984 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 23mΩ
Rated Power Dissipation: 1.6|W
Qg Gate Charge: 13nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS8984 is a 30 V 23 mΩ N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed

Features:

  • RDS(ON) = 18 mΩ, VGS = 10 V, ID = 7.5 A
  • RDS(ON) = 21 mΩ, VGS = 4.5 V, ID = 6.9 A
  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge
  • High power and current handling capability
  • 100% Rg Tested
  • RoHS Compliant 

Applications:

  • DC-DC Conversion
  • Battery powered circuits
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
5000
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,000.00
USD
Quantity
Unit Price
2,500
$0.205
5,000
$0.20
10,000
$0.199
12,500
$0.198
37,500+
$0.194
Product Variant Information section