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  6. IPP110N20N3GXKSA1

Infineon | IPP110N20N3GXKSA1

Manufacturer Part #

IPP110N20N3GXKSA1

Single N-Channel 200 V 10.7 mOhm 65 nC OptiMOS™ Power Mosfet - TO220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP110N20N3GXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 11mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 65nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 88A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 41ns
Rise Time: 26ns
Fall Time: 11ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 5340pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$775.00
USD
Quantity
Unit Price
50
$1.58
200
$1.55
750
$1.53
1,500
$1.52
3,750+
$1.50
Product Variant Information section