text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

warning.svg Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IPP60R099C6XKSA1

Infineon | IPP60R099C6XKSA1

Manufacturer Part #

IPP60R099C6XKSA1

Single N-Channel 600 V 99 mOhm 119 nC CoolMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP60R099C6XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 99mΩ
Rated Power Dissipation: 278W
Qg Gate Charge: 119nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 37.9A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 75ns
Rise Time: 12ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 2660pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$1,495.00
USD
Quantity
Unit Price
500
$2.99
1,000
$2.97
1,500
$2.95
2,000
$2.94
2,500+
$2.91
Product Variant Information section