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Manufacturer Part #

SI7972DP-T1-GE3

Dual N-Channel 60 V 18 mOhm 22 W TrenchFET Mosfet - PowerPAK SO-8 Dual

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI7972DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 3.6W
Qg Gate Charge: 15.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 20ns
Rise Time: 25ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.7V
Input Capacitance: 1050pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
6,000
Factory Stock:Factory Stock:
3,000
Factory Lead Time:
33 Weeks
Minimum Order:
6000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,820.00
USD
Quantity
Unit Price
3,000
$0.475
6,000
$0.47
9,000
$0.465
15,000+
$0.455
Product Variant Information section