Manufacturer Part #
STB120N4F6
N-Channel 40 V 4 mOhm STripFET VI Power MosFet - D2PAK
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics STB120N4F6 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
STMicroelectronics STB120N4F6 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 4mΩ |
| Rated Power Dissipation: | 110|W |
| Qg Gate Charge: | 65nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The STB120N4F6 is a product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Features:
- Standard threshold drive
- 100% avalanche tested
Application:
- Switching applications
- Automotive
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
26 Weeks
Quantity
Unit Price
50
$0.93
2,000
$0.915
3,000
$0.91
4,000
$0.905
5,000+
$0.89
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount