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Référence fabricant
BCR553E6327HTSA1
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SOT-23 (SC-59,TO-236) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Infineon BCR553E6327HTSA1 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject: Introduction of additional plating production at Wuxi Welnew Microelectronic Co., Ltd., Wuxi, China for several productsReason/Motivation:Expansion of plating production to assure continuity of supply and enable flexible manufacturing by recovery of Welnew Wuxi Plating site for DS products (PCN 2023-034-A) DescriptionOldShanghai Welnew Microelectronic Co., Ltd., Shanghai, ChinaNewShanghai Welnew Microelectronic Co., Ltd., Shanghai, ChinaWuxi Welnew Microelectronic Co., Ltd., Wuxi, ChinaIntended start of delivery: 2026-06-20Last order date (LOD): 2026-06-20Last delivery date (LDD): 2026-12-20
Status of 28 February 2023 (Update #3) On 6 January 2023, a fire incident took place at the production site of one of our manufacturing partners in Wuxi (China). Its plating lines that support our Infineon site in Wuxi were severely damaged by the fire. These circumstances are beyond our reasonable control. We are in close exchange with the affected manufacturing partner in Wuxi. The supplier will however not be able to provide services to Infineon until further notice.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=BCR553E6327HTSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--digital-transistors/bcr553e6327htsa1-infineon-6183536
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=BCR553E6327HTSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--digital-transistors/bcr553e6327htsa1-infineon-6183536
Infineon BCR553E6327HTSA1 - Caractéristiques techniques
| Polarity: | PNP |
| R1, R2: | 2.2kΩ/2.2kΩ |
| Collector Current Max: | 0.5A |
| CE Voltage-Max: | 50V |
| Power Dissipation-Tot: | 0.33W |
| Collector - Base Voltage: | 50V |
| Collector - Emitter Saturation Voltage: | 0.3V |
| DC Current Gain-Min: | 40 |
| Configuration: | Single |
| Collector - Current Cutoff: | 100nA |
| Frequency - Transition: | 150MHz |
| Style d'emballage : | SOT-23 (SC-59,TO-236) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-23 (SC-59,TO-236)
Méthode de montage :
Surface Mount