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Diodes Incorporated | DMN6070SSD-13

Manufacturer Part #

DMN6070SSD-13

DMN6070 Series 60 V 3.3 A 80 mOhm Dual N-Ch. Enhancement Mode Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN6070SSD-13 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 80mΩ
Rated Power Dissipation: 1.2W
Qg Gate Charge: 12.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.3A
Turn-on Delay Time: 3.5ns
Turn-off Delay Time: 35ns
Rise Time: 4.1ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 588pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
10,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$462.50
USD
Quantity
Unit Price
2,500
$0.185
7,500
$0.181
10,000
$0.18
25,000
$0.178
37,500+
$0.175
Product Variant Information section