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onsemi | FDA38N30

Manufacturer Part #

FDA38N30

N-Channel 300 V 0.085 Ohm 60 nC Flange Mount UniFET Mosfet - TO-3PN

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDA38N30 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 300V
Drain-Source On Resistance-Max: 85mΩ
Rated Power Dissipation: 312|W
Qg Gate Charge: 60nC
Package Style:  TO-3PN
Mounting Method: Through Hole
Features & Applications
The FDA38N30 is a part of FDA38N30 Series 300 V 0.085 Ω N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features:

  • RDS(on) = 0.07 Ω ( Typ.)@ VGS = 10 V, ID = 19 A
  • Low gate charge ( Typ. 60nC)
  • Low Crss ( Typ. 60 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • ESD Improved capability 
  • RoHS compliant

Applications:

  • High efficient S.M.P.S
  • Active power factor correction
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
450
Multiple Of:
450
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Total
$981.00
USD
Quantity
Unit Price
450
$2.18
900
$2.16
1,350
$2.15
1,800
$2.14
2,250+
$2.12
Product Variant Information section