Référence fabricant
FDH44N50
N-Channel 500 V 0.12 Ohm SMPS Power Mosfet TO-247
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :450 par Tube Méthode de montage :Through Hole | ||||||||||
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onsemi FDH44N50 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
onsemi FDH44N50 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 0.12Ω |
| Rated Power Dissipation: | 750|W |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The ruggedness that this technology offers, combined with its low package cost, has made the MOSFET universally preferred for all commercial-industrial applications. The robust design is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, Fairchild offers unique technological solutions ideal for power supplies, mobile, lighting, motor computing, consumer and automotive applications. Innovation continues to be at the forefront of Fairchild’s state of the art technology, providing global energy-efficient solutions.
Perfect for commercial, automotive and industrial applications, the FDH44N50 (this part is lead free) has the capacity to operate at 500V within an operating temperature range of 175 degrees C. The net result translates to a lower resistance (RDS (on) = 0.12 mOhms).
Repetitively avalanche rated, the FDH44N50 is able to reduce power dissipation levels to approximately 750 watts. The FDH44N50 provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-247 package format.
Emballages disponibles
Qté d'emballage(s) :
450 par Tube
Méthode de montage :
Through Hole