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Manufacturer Part #
IPB024N08NF2SATMA1
IPB024N08NF2S Series 80 V 107 A 2.4 mOhm Single N-Channel MOSFET - TO-263-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2236 | ||||||||||
Product Specification Section
Infineon IPB024N08NF2SATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
08/14/2025 Details and Download
Description of Change:Capacity expansion by introduction of an additional assembly and test location at Huayi Microelectronics Co., Ltd (HYME), China for dedicated N-channel power MOSFETs in PG-TO252-3 and PGTO263- 3 package.Reason for Change:Capacity expansion for existing assembly and final test site at Great Team Backend Foundry (GTBF)
Part Status:
Active
Active
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Infineon IPB024N08NF2SATMA1 - Technical Attributes
Attributes Table
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 80V |
| Drain-Source On Resistance-Max: | 2.4mΩ |
| Rated Power Dissipation: | 150W |
| Qg Gate Charge: | 133nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 107A |
| Turn-on Delay Time: | 19ns |
| Turn-off Delay Time: | 42ns |
| Rise Time: | 59ns |
| Fall Time: | 20ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.2V |
| Input Capacitance: | 6200pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
800
$1.10
2,400
$1.09
4,000+
$1.08
Product Variant Information section
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount