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Manufacturer Part #

IPB036N12N3GATMA1

Single N-Channel 120 V 3.6 mOhm 158 nC OptiMOS™ Power Mosfet - D2PAK-7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2314
Product Specification Section
Infineon IPB036N12N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 120V
Drain-Source On Resistance-Max: 3.6mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 158nC
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,030.00
USD
Quantity
Unit Price
1,000
$3.03
2,000+
$2.99
Product Variant Information section