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Manufacturer Part #

IPB60R099CPATMA1

Single N-Channel 650 V 99 mOhm 60 nC CoolMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2528
Product Specification Section
Infineon IPB60R099CPATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 99mΩ
Rated Power Dissipation: 255|W
Qg Gate Charge: 60nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,000
USA:
1,000
1,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,560.00
USD
Quantity
Unit Price
1,000
$3.56
2,000+
$3.51
Product Variant Information section