text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IPD25N06S4L30ATMA2

Infineon | IPD25N06S4L30ATMA2

Manufacturer Part #

IPD25N06S4L30ATMA2

IPD25N06S4L Series 60 V 25 A 29 W OptiMOS®-T2 Power-Transistor - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD25N06S4L30ATMA2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 30mΩ
Rated Power Dissipation: 29W
Qg Gate Charge: 12.5nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 25A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 15ns
Rise Time: 1ns
Fall Time: 2ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.7V
Technology: OptiMOS
Input Capacitance: 935pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
2,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$900.00
USD
Quantity
Unit Price
2,500
$0.36
5,000
$0.355
7,500
$0.35
12,500+
$0.345
Product Variant Information section