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Manufacturer Part #

IPW65R037C6FKSA1

Single N-Channel 650 V 37 mOhm 330 nC CoolMOS™ Power Mosfet - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2435
Product Specification Section
Infineon IPW65R037C6FKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 37mΩ
Rated Power Dissipation: 500W
Qg Gate Charge: 330nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 83.2A
Turn-on Delay Time: 22ns
Turn-off Delay Time: 140ns
Rise Time: 32ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 7240pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$264.90
USD
Quantity
Unit Price
30
$8.83
90
$8.77
150
$8.74
450
$8.67
750+
$8.61
Product Variant Information section