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Référence fabricant

IRF7495TRPBF

Single N-Channel 100 V 22 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Infineon IRF7495TRPBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 22mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 51nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 7.3A
Turn-on Delay Time: 8.7ns
Turn-off Delay Time: 10ns
Rise Time: 13ns
Fall Time: 36ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 1530pF
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications

The IRF7495TRPBF is a Single N-Channel 100 V 2.5 W 34nC Hexfet Power Mosfet. Operating temperature ranges from -55°C to 150°C and available in Surface Mount SOIC-8 Package.

Features:

  • Low Gate to Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design
  • Fully Characterized Avalanche Voltage and Current

Applications:

  • High frequency DC-DC converters
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
26 Semaines
Commande minimale :
4000
Multiples de :
4000
Total 
1 800,00 $
USD
Quantité
Prix unitaire
4 000
$0.45
8 000
$0.445
12 000
$0.44
16 000+
$0.435
Product Variant Information section