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Référence fabricant

IRF7853TRPBF

Single N-Channel 100 V 18 mOhm 39 nC HEXFET® Power Mosfet - SOIC-8

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Infineon IRF7853TRPBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 39nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8.3A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 26ns
Rise Time: 6.6ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.9V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 1640pF
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications
The IRF7853TRPBF is a single N-Channel 100 V 2.5 W 28nC Hexfet Power Mosfet. Operating temperature ranges from -55°C to 150°C and available in Surface Mount SOIC-8 Package.

Features:

  • Low Gate to Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design
  • Fully Characterized Avalanche Voltage and Current

Applications:

  • Primary Side Switch in Bridge Topology in Universal Input (36-75Vin) Isolated DC-DC Converters
  • Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC Converters
  • Secondary Side Synchronous Rectification Switch for 15 Vout
  • Suitable for 48 V Non-Isolated Synchronous Buck DC-DC Applications
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
26 Semaines
Commande minimale :
4000
Multiples de :
4000
Total 
1 660,00 $
USD
Quantité
Prix unitaire
4 000
$0.415
8 000
$0.41
16 000
$0.405
20 000+
$0.40
Product Variant Information section