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Référence fabricant
IRFH5020TRPBF
Single N-Channel 200 V 55 mOhm 36 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :4000 par Reel Style d'emballage :PQFN 5 x 6 mm Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Infineon IRFH5020TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject:Change of passivation at Infineon Technologies Kulim, Malaysia, for dedicated TISON, TDSON, TSDSON and IQFN productsDescription OldDie passivation - Epoxy resin material ANew:- Epoxy resin material BReason:Ensuring continuity of supply due to end of life of material from supplierIntended start of delivery 2025-08-01
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFH5020TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfh5020trpbf-infineon-4825386
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFH5020TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfh5020trpbf-infineon-4825386
Infineon IRFH5020TRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 55mΩ |
| Rated Power Dissipation: | 3.6|W |
| Qg Gate Charge: | 36nC |
| Style d'emballage : | PQFN 5 x 6 mm |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
International Rectifier, a world leader in power management technology, today introduced a family of HEXFET power MOSFETs including the IRFH5020TRPBF that delivers the industry’s lowest on-state resistance (RDS(on)).
The new power MOSFETs featuring IR’s latest silicon technology are the company’s first devices available in a 5x6mm PQFN package with optimized copper clip and solder die. The IRFH5020TRPbF is a 200V device delivers industry leading RDS(on) of only 59mOhm (max.) at 10V Vgs to significantly cut conduction losses for DC motor drive applications such as hand tools.
The 200V IRFH5020TRPBF is designed for DC switch applications such as active ORing and DC motor drive applications requiring high current carrying capability and high efficiency. The IRFH5020TRPBF features ultra low RDS(on) of 59mOhm (max.) combined with just 36nC gate charge (Qg).
In addition to achieving excellent thermal performance, as a result of using the IRFH5020TRPBF, board space and cost are reduced compared to existing solutions as fewer parts are required for a given power loss.
The IRFH5020TRPBF is a 200V, 59Mohms, 41a, PQFN(5x6) copper clip mosfet.
Emballages disponibles
Qté d'emballage(s) :
4000 par Reel
Style d'emballage :
PQFN 5 x 6 mm
Méthode de montage :
Surface Mount