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Manufacturer Part #

IRFZ24NPBF

Single N-Channel 55 V 0.07 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3

Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 1824
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.07Ω
Rated Power Dissipation: 45W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 17A
Turn-on Delay Time: 4.9ns
Turn-off Delay Time: 19ns
Rise Time: 34ns
Fall Time: 27ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Input Capacitance: 370pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Stock:
1,102
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.25
USD
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Quantity
Web Price
1
$0.25
200
$0.22
750
$0.21
2,500
$0.205
10,000+
$0.198
Product Variant Information section