Order by 9pm EDT to ship same day
NEW! Free shipping over $50 USD ($100 CAD). Learn more
Manufacturer Part #
IRFZ24NPBF
Single N-Channel 55 V 0.07 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
| | |||||||||||
| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | 1824 | ||||||||||
Product Specification
Shipping Information:
ECCN:
PCN Information:
Change Description:Capacity extension with introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME), China for TO220 3L MOSFET products in Gen 5.X/7.X/10.X (up to Hex 4.4). Reason: Expansion of assembly and final test production to assure continuity of supply and enable flexible manufacturing.
Detailed Change Information: Subject: Change of wafer production location from Infineon Technologies Temecula, USA to Sichuan Gen Microelectronics co.LTD, China for MOSFET G5.0N 40 - 60V (wave 1 for DPAK, TO220 and TO247) Reason: The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD according to global Infineon production strategy. Impact of Change: NO change of electrical and thermal parameters as proven via product qualification and characterization. NO change in existing datasheet parameters NO change in quality and reliability. Processes are optimized to meet product performance according to already applied Infineon specification. Time Schedule: Final qualification report: available First samples available: June 2020 or earlier Intended start of delivery: August 2020 or earlier (depending on PCN acceptance)
Detailed Change Information: Change of lot number format in bar code labelling and marking of physical units affecting TDSON, TO220, TO247, TO252, TO263, and TSDSON at ASE (WEI HAI), INC. Reason: Standardization of International Rectifier (IR) Legacy products with Infineon Technologies (IFX) lot number nomenclature format.
Product Lifecycle:
Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.07Ω |
| Rated Power Dissipation: | 45W |
| Qg Gate Charge: | 20nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 17A |
| Turn-on Delay Time: | 4.9ns |
| Turn-off Delay Time: | 19ns |
| Rise Time: | 34ns |
| Fall Time: | 27ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Input Capacitance: | 370pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole
