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Référence fabricant
IRLH5030TRPBF
Single N-Channel 100 V 9.9 mOhm 44 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :4000 par Reel Style d'emballage :PQFN 5 x 6 mm Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2440 | ||||||||||
Infineon IRLH5030TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Detailed change informationSubject:Change of passivation at Infineon Technologies Kulim, Malaysia, for dedicated TISON, TDSON, TSDSON and IQFN productsDescription OldDie passivation - Epoxy resin material ANew:- Epoxy resin material BReason:Ensuring continuity of supply due to end of life of material from supplierIntended start of delivery 2025-08-01
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRLH5030TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irlh5030trpbf-infineon-4173912
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRLH5030TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irlh5030trpbf-infineon-4173912
Infineon IRLH5030TRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 9.9mΩ |
| Rated Power Dissipation: | 3.6|W |
| Qg Gate Charge: | 44nC |
| Style d'emballage : | PQFN 5 x 6 mm |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
International Rectifier (IR) deals with advanced power management technology, from digital, analog and mixed-signal ICs to advanced circuit devices, power systems and components.
The new power MOSFETs, featuring IR’s latest silicon technology to deliver benchmark performance are designed for switching applications including DC to DC converters for network and telecom equipment, AC-DC Switch Mode Power Supplies (SMPS), and motor drive switches. Available in a wide range of voltages from 40 V to 250 V, the devices provide various levels of on-state resistance and gate charge to offer customers optimized performance and cost for a given application.
IRLH5030TRPBF is part of the IRLH50 Series family with 100 V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package.This device is lead free.
Features:
- Low RDSon (=9.0 mO) (Lower Conduction Losses)
- Low Thermal Resistance to PCB (=0.5°C/W) (Enable better thermal dissipation)
- 100% Rg tested (Increased Reliability)
- Low Profile (= 0.9 mm) (results in Increased Power Density)
- Industry-Standard Pinout (Multi-Vendor Compatibility)
- Compatible with Existing Surface Mount Techniques (Easier Manufacturing)
- RoHS Compliant Containing no Lead, no Bromide and no Halogen (Environmentally Friendlier)
- MSL1, Industrial Qualification (Increased Reliability)
Applications:
- Secondary Side Synchronous Rectification
- Inverters for DC Motors
- DC-DC Brick Applications
- Boost Converters
To learn more about the IRLH50 series products, Click Here.
Emballages disponibles
Qté d'emballage(s) :
4000 par Reel
Style d'emballage :
PQFN 5 x 6 mm
Méthode de montage :
Surface Mount