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Manufacturer Part #

ISC230N10NM6ATMA1

Single N-Channel 100 V 23 mOhm 9.3 nC OptiMOS Power Mosfet - PG-TDSON-8 FL

Product Specification Section
Infineon ISC230N10NM6ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 23mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 7.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 7.7A
Turn-on Delay Time: 4.5ns
Turn-off Delay Time: 6.5ns
Rise Time: 1ns
Fall Time: 9ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 530pF
Series: OptiMOS 6
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
100
USA:
100
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$1.03
USD
Quantity
Unit Price
1
$1.03
20
$0.92
100
$0.86
500
$0.80
2,500+
$0.74