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Manufacturer Part #
MRF101BN
MRF Series 100W CW 1.8-250 MHz 50V Wideband RF Power LDMOS Transistor - TO-220-3
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| Mfr. Name: | NXP | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Bulk Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
NXP MRF101BN - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=MRF101BN&field4=NXP&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/mrf101bn-nxp-6107354
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=MRF101BN&field4=NXP&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/mrf101bn-nxp-6107354
NXP MRF101BN - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 133V |
| Rated Power Dissipation: | 182W |
| Gate-Source Voltage-Max [Vgss]: | 10V |
| Operating Temp Range: | -40°C to +175°C |
| Gate Source Threshold: | 2.2V |
| Input Capacitance: | 149pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
10 Weeks
Quantity
Unit Price
50
$23.29
100
$23.14
150+
$22.99
Product Variant Information section
Available Packaging
Package Qty:
50 per Bulk
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole