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Manufacturer Part #

MRF101BN

MRF Series 100W CW 1.8-250 MHz 50V Wideband RF Power LDMOS Transistor - TO-220-3

Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code: 1842
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 133V
Rated Power Dissipation: 182W
Gate-Source Voltage-Max [Vgss]: 10V
Operating Temp Range: -40°C to +175°C
Gate Source Threshold: 2.2V
Input Capacitance: 149pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Stock:
200
Minimum Order:
50
Multiple Of:
50
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Total
$770.50
USD
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Quantity
Web Price
50
$15.41
100
$15.11
150+
$14.94
Product Variant Information section