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Manufacturer Part #

MRF101BN

MRF Series 100W CW 1.8-250 MHz 50V Wideband RF Power LDMOS Transistor - TO-220-3

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
NXP MRF101BN - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 133V
Rated Power Dissipation: 182W
Gate-Source Voltage-Max [Vgss]: 10V
Operating Temp Range: -40°C to +175°C
Gate Source Threshold: 2.2V
Input Capacitance: 149pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
250
Multiple Of:
50
Total
$4,805.00
USD
Quantity
Web Price
50
$19.43
100+
$19.22
Product Variant Information section