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Référence fabricant

NDT014L

N-Channel 60 V 0.16 Ohm SMT Enhancement Mode Field Effect Transistor SOT-223

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Code de date:
Product Specification Section
onsemi NDT014L - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.16Ω
Rated Power Dissipation: 1.1|W
Qg Gate Charge: 5nC
Style d'emballage :  SOT-223 (TO-261-4, SC-73)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The NDT014L Part Number is a N-Channel logic level enhancement mode power field effect transistors are produced using, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.

Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features:

  • 2.8 A, 60 V.
  • RDS(ON) = 0.2 O @ VGS = 4.5 V
  • RDS(ON) = 0.16 O @ VGS = 10 V
  • High density cell design for extremely lowRDS(ON).
  • High power and current handling capability in a widely used surface mount package.

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
9 Semaines
Commande minimale :
4000
Multiples de :
4000
Total 
1 740,00 $
USD
Quantité
Prix unitaire
4 000
$0.435
8 000
$0.43
16 000+
$0.425