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Référence fabricant
SIA910EDJ-T1-GE3
Dual N-Channel 12 V 28 mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :POWERPAK-SC-70-6L Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2421 | ||||||||||
Vishay SIA910EDJ-T1-GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: Vishay Siliconix announces the new expoxy material, ABP6395T from Henkel, adopted in PowerPAK SC70 package for continuously yield improvement in in-house Simconix manufacturing factoryReason for Change: Continuously yield improvementTime Schedule: Start Shipment Date: Friday November 21, 2025
Description of Change: To meet the increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer BGBM process (Backside-Grind and Backside-Metallization) for commercial Low-Voltage Power MOSFETs at in-house Siliconix Philippines Inc.(SPI) facility in Binan, Philippines.Reason for Change: Capacity Expansion
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SIA910EDJ-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/sia910edj-t1-ge3-vishay-7002450
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SIA910EDJ-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/sia910edj-t1-ge3-vishay-7002450
Vishay SIA910EDJ-T1-GE3 - Caractéristiques techniques
| Fet Type: | Dual N-Ch |
| Drain-to-Source Voltage [Vdss]: | 12V |
| Drain-Source On Resistance-Max: | 28mΩ |
| Rated Power Dissipation: | 7.8|W |
| Qg Gate Charge: | 16nC |
| Style d'emballage : | POWERPAK-SC-70-6L |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
POWERPAK-SC-70-6L
Méthode de montage :
Surface Mount