text.skipToContent text.skipToNavigation

Promotion IconFree shipping over $100 USD. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. STB100N6F7

STMicroelectronics | STB100N6F7

Manufacturer Part #

STB100N6F7

Single N-Channel 60 V 5.6 mOhm 30 nC 125 W Silicon SMT Mosfet - TO-263-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB100N6F7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 5.6mΩ
Rated Power Dissipation: 125W
Qg Gate Charge: 30nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 100A
Turn-on Delay Time: 21.6ns
Turn-off Delay Time: 28.6ns
Rise Time: 55.5ns
Fall Time: 15ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 4.6mm
Length: 1.4mm
Input Capacitance: 1980pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$690.00
USD
Quantity
Unit Price
1,000
$0.69
2,000
$0.68
3,000
$0.675
4,000
$0.67
5,000+
$0.66
Product Variant Information section