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Manufacturer Part #

STH310N10F7-2

N-Channel 100 V 2.3 mOhm STripFET™ VII DeepGATE Power Mosfet-H2PAK-2

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STH310N10F7-2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 2.3mΩ
Rated Power Dissipation: 315|W
Qg Gate Charge: 180nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,330.00
USD
Quantity
Unit Price
1,000
$2.33
2,000
$2.31
3,000+
$2.29
Product Variant Information section