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STMicroelectronics | STW33N60M6

Manufacturer Part #

STW33N60M6

N-Channel 600 V, 105 mΩ typ., 25 A, MDmesh™ M6 Power MOSFET in a TO-247 package

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STW33N60M6 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 125mΩ
Rated Power Dissipation: 190W
Qg Gate Charge: 33.4nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 25A
Turn-on Delay Time: 19.5ns
Turn-off Delay Time: 38.5ns
Rise Time: 33ns
Fall Time: 7.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 1515pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
600
Multiple Of:
30
Total
$1,674.00
USD
Quantity
Unit Price
30
$2.88
120
$2.83
450
$2.79
900
$2.77
2,250+
$2.72
Product Variant Information section