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Taiwan Semiconductor | TSM1NB60CW RPG

Manufacturer Part #

TSM1NB60CW RPG

N-Channel 600 V 0.7 A 11 W Surface Mount Power MOSFET - SOT-223

ECAD Model:
Mfr. Name: Taiwan Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2315
Product Specification Section
Taiwan Semiconductor TSM1NB60CW RPG - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 10Ω
Rated Power Dissipation: 11W
Qg Gate Charge: 7.4nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 0.7A
Turn-on Delay Time: 6.4ns
Turn-off Delay Time: 14ns
Rise Time: 10ns
Fall Time: 26ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.1V
Input Capacitance: 158pF
Package Style:  SOT-223 (TO-261-4)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$787.50
USD
Quantity
Unit Price
2,500
$0.315
7,500
$0.31
12,500+
$0.305
Product Variant Information section