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Manufacturer Part #

IMBG120R045M1HXTMA1

1200 V 47A 227 W Surface Mount N-Channel SiC Trench MOSFET - PG-TO263-7-12

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IMBG120R045M1HXTMA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 47A
Input Capacitance: 1527pF
Power Dissipation: 227W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$8,190.00
USD
Quantity
Web Price
1,000+
$8.19
Product Variant Information section