Manufacturer Part #
CY62157EV30 Series 8 Mb (512 K x 16) 2.2 - 3.6 V 45 ns Static RAM - TSOP-48
|Standard Pkg:|| |
Product Variant Information section
96 per Tray
Description of Change: This notification is to inform customers that Cypress will be standardizing its Full Box Quantity to a sellable quantity in the market where it will be able to round the orders in increment of this full box quantity. It may be recalled that Cypress had implemented Manufacturing Label and Packing Configuration Standardization via Product Information Notification PIN195102 in December 2019. As part of the Cypress integration into Infineon Shipping Standard, Cypress will be adjusting Minimum Order Quantity (MOQ), Order Increment (OI) to align them with new Full Box Quantity for select parts shipped in trays and tubes.
Description of Change: Cypress announces the qualification of UMC's 65nm (No. 3, Li-Hsin 2nd Rd., Hsinchu Science Park, Hsinchu, Taiwan, R.O.C.) as an alternate wafer fab site for select 90nm 1.65V - 3.6V industrial grade 8Mb MoBLTM products. The 65nm products are drop-in replacement parts and form, fit, and function compatible with the 90nm 8Mb Async MoBLTM SRAM products manufactured at SkyWater, Minnesota. There are some updates to certain DC specifications, including a revision in the VCC operating supply current at f = 1MHz (ICC) at 85�C from 3mA to 7mA and data retention current (ICCDR) at 85�C from 5?A to 8?A for the 3.0V device and from 3?A to 9?A for the 1.8V device. The updated product datasheets are attached to this notification and can be downloaded from the Cypress Website (www.cypress.com). There is no change to the existing marketing part numbers. Benefit of Change: Qualification of alternate manufacturing sites and technologies is part of Cypress' ongoing flexible manufacturing initiative. The goal of the flexible manufacturing initiative is to provide the means for Cypress to continue to meet delivery commitments through dynamic, changing market conditions.
Addendum to PIN195102 - Manufacturing Label and Packing Configuration Standardization Description of Change: The purpose of this addendum is to correct the date from January 20, 2019 to January 20, 2020, in the "3rd paragraph in the 'Description of Change' section. This notification is to inform customers that Cypress will be standardizing its manufacturing labels and tray/tube packing configuration. It may be recalled that the Cypress entity consolidation (following the merger with Spansion Corp) was announced via Product Information Notification PIN174801 in November 2017. As the next phase of the entity consolidation process, Cypress will be adapting a new manufacturing label format for all products and revising shipping configurations for select product shipped in trays and tubes.
Planned Qualification of Spansion Manufacturing Sites for Cypress ProductsDescription of Change:In concert with the recently announced merger between Cypress Semiconductor Corporation (Cypress) and Spansion Inc. (Spansion), Cypress announces plans to qualify proprietary SONOS Technology products at Spansion Fab 25 / Test 25 in Austin, Texas and BGA/TSOP-packaged products at the Spansion assembly facility in Bangkok, Thailand. These qualifications and implementations are expected to occur throughout 2015 and 2016. Once complete, the qualifications will be announced through regular PCNs.This is an advance notification and no immediate action is needed. Refer to the attached Supplier documentation for the complete schedule of the activity, PCN issue dates and shipment start dates.
|Memory Organization:||512 K x 16|
|Supply Voltage-Nom:||2.2V to 3.6V|
|Package Style:||TSOP I-48|
|Mounting Method:||Surface Mount|
Features & Applications
The CY62157EV30LL-45ZXI is a part of CY62157E series static RAM. It has an operating temperature ranging from -40° C to +85° C and is available in TSOP-48 package.
- Very high speed: 45 ns
- Wide voltage range: 4.5 V to 5.5 V
- Pin compatible with CY62148DV30
- Ultra low standby power
- -Typical standby current: 2 μA
- -Maximum standby current: 8 μA
- Ultra low active power
- -Typical active current: 1.8 mA at f = 1 MHz
- Easy memory expansion with CE1,CE2 and OE features
- Automatic power-down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed and power
96 per Tray