STMicroelectronics — STPOWER Gen3 SiC MOSFETs

STMicroelectronics STPOWER Gen3 SiC MOSFETs

Drive next-generation EV and industrial power conversion performance

STMicroelectronics' STPOWER Gen3 Silicon Carbide (SiC) MOSFETs introduce a new standard in efficiency, power density, and high-speed switching performance. Designed to meet the evolving demands of electric vehicle (EV) systems and industrial power conversion, these third-generation devices offer significant performance improvements over previous SiC technologies.

The Gen3 portfolio features ultra-low RDS(on) across the full operating temperature range and supports higher breakdown voltages available in 650 V, 750 V, 900 V, and 1200 V variants. These characteristics make the devices well-suited for applications where compact size, thermal efficiency, and extended system range are essential.
 

Optimized for High-Efficiency Power Designs

STPOWER Gen3 SiC MOSFETs are designed to operate at temperatures up to 200 °C, with a fast and rugged intrinsic body diode and low capacitance that support high switching frequencies. A source-sensing pin is included to improve gate driving performance and system-level efficiency.

STPOWER Gen3 SiC MOSFETs enable reduced system size and weight, increased range in electric vehicles, and higher overall system efficiency. A full range of voltage and package options is available to support a wide array of automotive and industrial designs.
 

STMicroelectronics' Vertically Integrated Silicon Carbide Campus

The Catania Silicon Carbide Campus will serve as the center of STMicroelectronics’s global SiC ecosystem, integrating all steps in the production flow from R&D to manufacturing, including SiC substrate development, 200mm front-end wafer fabrication, and test, packaging, and module back-end assembly. This will create a full vertically integrated SiC manufacturing facility for the mass production of SiC discretes, bare die and power modules serving markets including Electric Vehicles, Fast Charging Infrastructure, Renewable Energy generation and storage, Datacenter and AI infrastructure and other industrial applications.

Key Benefits:

• STMicroelectronics is supporting a growing market by offering a larger and vertically integrated manufacturing footprint to bring additional capacity to its European and global customers as they transition to decarbonization and electrification.
• Full control of supply chain with 100% vertically integrated process from R&D to manufacturing, basically from SiC powder to finished good SiC, will optimize product yield, performance and efficiency and quality improvement of the final SiC devices.