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Référence fabricant
IRFR5410TRPBF
Single P-Channel 100 V 0.205 Ohm 58nC HEXFET® Power Mosfet - TO-252AA
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2000 par Reel Style d'emballage :TO-252AA Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Infineon IRFR5410TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason :The wafer production of the affected products will be transferred to Infineon Technologies Kulim, according to global Infineon production strategy.
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFR5410TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/irfr5410trpbf-infineon-2743227
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFR5410TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/irfr5410trpbf-infineon-2743227
Infineon IRFR5410TRPBF - Caractéristiques techniques
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.205Ω |
| Rated Power Dissipation: | 66|W |
| Qg Gate Charge: | 58nC |
| Style d'emballage : | TO-252AA |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
2000 par Reel
Style d'emballage :
TO-252AA
Méthode de montage :
Surface Mount